Cornell University Advances RF Power Electronics with Single-Crystal AlN XHEMT Technology
Cornell University has unveiled a significant breakthrough in next-generation semiconductor engineering with the development of a new high-electron-mobility transistor (XHEMT) built on single-crystal aluminium nitride (AlN) substrates. Designed for high-power, high-frequency wireless applications, the new architecture offers major improvements in thermal performance, defect reduction, and long-term reliability while addressing growing supply chain constraints around gallium. A New Device Structure […]