New GaN platform delivers higher power density, improved efficiency, and advanced thermal performance for AI data centers, industrial automation, robotics, and energy infrastructure applications.

Onsemi has announced the launch of its GaNEXUS Gallium Nitride (GaN) power portfolio, marking a significant expansion of the company’s intelligent power technology offerings. The portfolio debuts with the sampling of GaNEXUS FETs spanning voltage ranges from 40V to 650V, alongside the introduction of GaNEXUS Smart 650V GaN FETs, designed to address the growing power efficiency demands of artificial intelligence (AI), industrial automation, energy infrastructure, and next-generation computing systems.

The launch comes at a time when the rapid growth of AI workloads, electrification, and digital infrastructure is placing unprecedented pressure on power delivery architectures. As hyperscale data centers and high-performance computing environments continue to scale, system designers are increasingly challenged by rising energy consumption, thermal management complexities, and space constraints.

Industry forecasts indicate that AI-driven data centers could account for a substantial share of electricity consumption in the coming decade, making energy efficiency and power density critical design considerations. Against this backdrop, onsemi’s GaNEXUS platform aims to provide engineers with a new generation of power semiconductors capable of delivering higher performance while reducing system size and operating costs.

Built on advanced Gallium Nitride technology, GaNEXUS devices enable significantly faster switching speeds and lower switching losses compared to conventional silicon-based solutions. The result is improved power conversion efficiency, enhanced thermal performance, and increased power density across a wide range of applications.

The portfolio complements onsemi’s existing power semiconductor ecosystem, which includes silicon-based technologies and its EliteSiC™ silicon carbide solutions. Together, these technologies provide customers with a broader spectrum of options to optimize efficiency, thermal behavior, performance, and total system cost across diverse power architectures.

GaNEXUS is engineered to support a variety of emerging and power-intensive applications, including:

• AI Data Center Power Delivery
• 48V Computing Architectures
• Intermediate Bus Converters (IBC)
• Battery Backup Units (BBU)
• Robotics and Industrial Automation
• Electric Vehicle Charging Systems
• High-Voltage DC-DC Conversion
• Power Factor Correction (PFC) Systems
• LLC Resonant Converters
• Renewable Energy and Power Infrastructure

By enabling more efficient power conversion and distribution, the technology helps address key industry requirements for compact design, higher reliability, and improved energy utilization.

Significant Gains in Efficiency and Power Density

According to onsemi, GaNEXUS delivers measurable improvements across both low-voltage and high-voltage power systems.

For low- and medium-voltage applications, such as AI server power architectures and motor drives, the technology enables:

• Approximately 30%–60% reduction in magnetic component size
• Up to 2x higher power density
• Efficiency improvements of up to 2%, depending on system topology
• Reduced switching losses and enhanced thermal performance
• Improved control stability and system responsiveness

In high-voltage power conversion stages, including AI power shelves and advanced AC-DC architectures, GaNEXUS can provide:

• Up to 60% smaller magnetics in high-frequency designs
• Up to 2x greater power density
• Meaningful efficiency gains that reduce operating costs at scale
• Lower thermal stress in compact, high-power environments
• Simplified qualification and power-stage development through integrated smart functionality

Commenting on the launch, Antoine Jalabert, Vice President of the GaN Division at onsemi, emphasized the role of GaN technology in transforming power system design.

“GaNEXUS portfolio is enabling new architectures for power system design. As customers continue to demand more power within increasingly constrained spaces, GaNEXUS provides engineers with the flexibility needed to overcome the limitations of conventional power architectures while improving overall system performance and efficiency.”

The company also highlighted the synergy between GaNEXUS devices and its Treo Platform, which integrates sensing, control, protection, and power management capabilities into a comprehensive system-level solution. When deployed together, the technologies can help accelerate development cycles, simplify design complexity, reduce cooling requirements, and improve reliability across the entire power delivery chain.

To support deployment across diverse applications, GaNEXUS devices are offered in thermally optimized packages featuring industry-standard footprints that facilitate dual sourcing and design flexibility.

Available packaging options include:

• TOLL Bottom Cooling
• TOLT Top Cooling
• Dual-Cooling 3.3 mm × 3.3 mm Packages
• Dual-Cooling 5 mm × 6 mm Packages

These advanced packaging technologies are designed to enhance thermal dissipation while supporting the increasing power density requirements of modern electronic systems.

Strengthening onsemi’s Position in Wide-Bandgap Power Technologies

The introduction of GaNEXUS reinforces onsemi’s strategic focus on wide-bandgap semiconductor technologies, an area experiencing rapid adoption across AI infrastructure, industrial automation, renewable energy systems, and next-generation mobility applications.

As the semiconductor industry continues its transition toward more efficient power architectures, Gallium Nitride is emerging as a key enabler of higher-performance electronic systems. With the launch of GaNEXUS, onsemi is positioning itself to capitalize on the growing demand for intelligent, energy-efficient power solutions capable of supporting the next wave of technological innovation.

Key Highlights

• GaNEXUS GaN FET portfolio launched from 40V to 650V
• Includes Smart 650V GaN FET solutions
• Targets AI data centers, robotics, industrial automation, and energy infrastructure
• Delivers up to 2x higher power density
• Enables up to 60% reduction in magnetic component size

Keep checking back for more detailed information right now: https://semiconductorinsight.com/report/gallium-nitride-gan-power-semiconductor-market/