A multinational research team from Université Grenoble Alpes, Stanford University, and University of Padova has reported a major advancement in wide-bandgap power electronics: the first experimental demonstration of avalanche breakdown behavior in quasi-vertical gallium nitride (GaN) diodes fabricated on silicon substrates. 

The study, published in Journal of Applied Physics (2025), confirms that the GaN diodes achieved avalanche breakdown at 720V at room temperature, a critical milestone because avalanche breakdown is non-destructive, enabling safer and more reliable operation in high-voltage power systems. 

Key Technical Highlights 

• 720V avalanche breakdown achieved at room temperature 

• Non-destructive breakdown behavior, improving device reliability 

• Selective Area Growth (SAG) used to enhance GaN material quality on silicon 

• Demonstrates the feasibility of vertical GaN power devices on cost-effective silicon substrates 

GaN-on-Silicon: A Commercial Advantage 

Vertical GaN devices are typically fabricated on native or freestanding GaN wafers, which are expensive and limited in size posing a barrier to large-scale commercialization. By contrast, GaN-on-silicon technology combines GaN’s electrical performance with the cost efficiency and mature manufacturing infrastructure of large-diameter silicon wafers. 

While GaN-on-Si growth is challenged by lattice and thermal expansion mismatch, the researchers point to Selective Area Growth (SAG) as a powerful approach to improving crystal quality. Importantly, SAG on silicon also opens the door to monolithic integration of GaN power devices with mainstream silicon electronics. 

What’s next? 

According to the research team, further performance improvements are expected through: 

• Optimized device geometry 

• Advanced edge termination schemes 

These enhancements could accelerate the adoption of high-voltage GaN power devices across electric vehicles, renewable energy systems, industrial power conversion, and grid-level applications. 

This breakthrough reinforces GaN-on-silicon as a practical and scalable pathway toward high-performance vertical power electronics bridging the gap between laboratory innovation and real-world deployment. 

Examine Our Most Recent Updated Related Report:

 https://semiconductorinsight.com/report/gallium-nitride-power-devices-for-fast-charging-market/