Mitsubishi Electric has announced that it will begin sequential shipment of samples in late June for two new 5th-generation silicon carbide metal-oxide-semiconductor field-effect transistors, or SiC-MOSFETs, in bare die form. The new devices are designed for inverter applications in electric vehicles, plug-in hybrid vehicles, and other electrified vehicles, with a clear focus on improving efficiency, compactness, and long-term reliability.

The launch reflects the growing importance of silicon carbide technology in the electrified mobility market. As automakers continue to demand smaller, lighter, and more efficient power systems, SiC-based components are becoming increasingly central to inverter and eAxle design. Mitsubishi Electric’s new bare die SiC-MOSFETs are intended to support that shift by delivering stronger performance in a format suited to advanced power module integration.

• A key feature of the new products is Mitsubishi Electric’s proprietary trench structure. According to the company, the new SiC-MOSFETs achieve industry-leading low on-resistance that is approximately 25% lowerthan that of its existing products.
• In practical terms, lower on-resistance can help reduce conduction losses, improve efficiency, and support higher-performance inverter operation. That makes the technology particularly relevant for next-generation xEV platforms, where range, thermal management, and power efficiency remain critical design priorities.
• The new devices are being developed for use in drive motor inverters and eAxles, two core systems in electrified vehicles. These systems are under increasing pressure to deliver more power in less space while maintaining durability over long operating periods.
• Mitsubishi Electric says its new SiC-MOSFETs are designed to contribute to both performance and miniaturisation, helping support more compact inverter architectures without compromising efficiency.

Another important aspect of the product development is stability over time. Mitsubishi Electric says its proprietary manufacturing process technology helps suppress performance degradation and fluctuations in power loss and on-resistance. That focus on long-term consistency is especially important in automotive applications, where component reliability and predictable behaviour are essential across the vehicle lifecycle.

The company’s announcement also comes ahead of its planned showcase at PCIM Expo & Conference 2026 in Nuremberg, Germany, where the products will be presented alongside other international exhibitions in Japan, China, and additional markets. The timing suggests that Mitsubishi Electric is positioning the new SiC-MOSFETs as part of a broader global push to strengthen its presence in the high-growth power semiconductor sector.

The launch is especially relevant in the current automotive and semiconductor landscape, where electrification is no longer only about adding batteries and motors. It is also about improving every layer of the powertrain architecture, from switching devices to thermal efficiency and system integration. In that environment, SiC semiconductors are becoming one of the key technologies shaping future EV performance.

For Mitsubishi Electric, the new 5th-generation SiC-MOSFETs represent more than a product update. They signal continued investment in power semiconductor innovation at a time when the industry is looking for better efficiency, higher reliability, and greater design flexibility in electrified transport systems. As demand rises for more advanced xEV platforms, components like these are likely to play an increasingly important role in the next phase of mobility electrification.

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