Infineon Technologies AG has expanded its GaN power portfolio with the introduction of the CoolGaN Drive HB 600V G5 product family, reinforcing its commitment to delivering scalable and easy-to-integrate power conversion solutions. 

The new lineup includes four devices IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M, and IGI60L5050B1M each integrating two 600V GaN switches in a half-bridge configuration. The devices also incorporate high- and low-side gate drivers along with a bootstrap diode, creating a compact, thermally optimized power stage within a single package. 

By consolidating key functions, the CoolGaN Drive HB 600V G5 family reduces external component requirements and simplifies PCB layout challenges typically associated with high-speed GaN switching. The integrated design approach enables engineers to shorten development cycles while maintaining system robustness and performance. 

The new devices deliver the core advantages of GaN technology, including: 

• Higher switching frequencies 

• Lower switching and conduction losses 

• Greater power density 

• Improved overall efficiency 

According to Infineon, the goal is to combine high-speed GaN performance with enhanced integration and reliability, enabling designers to build smaller, more efficient, and higher-performing power systems. 

With this latest expansion, Infineon continues to push the boundaries of compact power electronics, supporting innovation across industrial, consumer, and advanced energy applications. 

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 Next-Generation Power Electronics | Integrated GaN Innovation 

Infineon Technologies AG has expanded its CoolGaN portfolio with the launch of the CoolGaN Drive HB 600V G5 product family introducing four new integrated devices designed to simplify high-performance power design. 

 New devices: 

  IGI60L1111B1M | IGI60L1414B1M | IGI60L2727B1M | IGI60L5050B1M 

 Each solution integrates: 

• Dual 600V GaN switches in a half-bridge configuration 

• High- and low-side gate drivers 

• Integrated bootstrap diode 

  The result is a compact, thermally optimized power stage that reduces external component count, simplifies PCB layout, and shortens development cycles while unlocking the core advantages of GaN technology: 

• Higher switching frequencies 

• Lower switching and conduction losses 

• Increased power density 

• Improved overall system efficiency 

By combining high-speed GaN performance with deeper integration and enhanced robustness, Infineon continues to support designers in building smaller, faster, and more efficient power systems across industrial, consumer, and high-performance applications. 

A strategic step forward in accelerating the transformation of modern power conversion. 

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