IBM and Lam Research have announced a new collaboration focused on developing advanced materials and fabrication processes to support sub-1nm logic scaling, marking a significant step toward the next generation of semiconductor technology. 

Building on more than a decade of successful collaboration, the companies have entered into a five-year agreement aimed at extending logic scaling beyond current limits. The initiative will focus on the joint development of novel materials, advanced etch and deposition capabilities, and High-NA EUV lithography processes to enable increasingly complex semiconductor device architectures. 

The partnership follows previous breakthroughs achieved by the two organizations, including contributions to early 7nm, nanosheet, and EUV process technologies, as well as the development of the world’s first 2nm node chip unveiled by IBM in previous years. Through the new agreement, the companies aim to accelerate the industry’s transition toward smaller, more efficient semiconductor nodes. 

The collaboration will combine IBM’s semiconductor research expertise at the NY Creates Albany NanoTech Complex with Lam Research’s advanced process technologies. These include innovations in dry resist technology, etch and deposition systems, and advanced packaging platforms designed to support nanosheet and nanostack devices as well as backside power delivery architectures. 

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