EPC Puts GaN Power Technology in the Spotlight as AI, Robotics and Space Push Power Systems Further

At electronica 2026, EPC is showcasing a new generation of eGaN FETs, integrated power stages and reference designs aimed at solving one of the semiconductor industry’s biggest challenges: delivering more power in smaller, faster and more efficient systems.

As artificial intelligence, robotics and autonomous machines continue to demand higher computing performance, the power infrastructure supporting these systems is becoming a critical part of semiconductor innovation.

Against this backdrop, Efficient Power Conversion Corp. (EPC) is bringing its latest enhancement-mode gallium nitride-on-silicon (eGaN) technologies to electronica 2026 in Munich, highlighting how GaN power devices can reshape power delivery across AI computing, intelligent motion systems and space electronics.

EPC will showcase its technologies at Booth 221, Hall C6, from November 10-13, with demonstrations spanning high-voltage power distribution, point-of-load conversion, motor drives and radiation-hardened electronics.

One of the strongest themes at EPC’s showcase is the growing requirement for efficient power conversion inside AI infrastructure.

Modern AI processors are pushing data-center power architectures toward higher voltages, greater current density and increasingly compact conversion stages. EPC is therefore demonstrating GaN solutions across the power-delivery chain, including an 800VDC distribution architecture moving toward low-voltage processor rails.

A key demonstration is the EPC91123 6kW 800V-to-12.5V ISOP LLC converter, alongside a new 6kW 800V-to-6V converter designed to bring high-voltage power closer to next-generation AI processors.

The technology direction is significant because reducing conversion losses and physical size becomes increasingly valuable as AI accelerator power requirements climb.

EPC is also placing its Gen8 GaN power-stage technology in the spotlight.

The technology is designed for ultra-high-frequency, low-voltage conversion, including direct conversion from approximately 6.25V to sub-1V processor rails at multi-megahertz frequencies.

That matters because the final stages of power delivery are becoming increasingly demanding.

AI processors operate at very low core voltages while consuming substantial power. Converting electricity efficiently at these voltage levels requires power components capable of switching rapidly without allowing losses and thermal demands to undermine system performance.

GaN’s high-frequency switching capability is therefore becoming an important part of the conversation around high-density processor power delivery.

GaN Moves from Data Centers into Physical AI;

• EPC’s showcase also reflects another emerging semiconductor trend: the convergence of power electronics and physical AI.
• Humanoid robots, drones and autonomous machines require compact motor-drive systems capable of handling rapid changes in motion while maintaining efficiency and thermal performance.
• For these applications, EPC is demonstrating integrated GaN solutions including the EPC33110 100V three-phase integrated ePower Stage IC for compact motor-drive architectures.
• The company is also previewing the EPC33111, targeting further miniaturization for applications where board space and system weight are particularly constrained.
• Multiple motor-drive reference designs based on EPC’s Gen7 GaN devices and EPC33110 are also being demonstrated.

The GaN opportunity extends beyond terrestrial AI and robotics.

Through EPC Space, the company is highlighting radiation-hardened and radiation-tolerant GaN technologies for space power systems, including DC-DC conversion, POL/IVR applications and space computing.

Devices being showcased include the EPC7011, EPC7009, EPC7050PCSH, EPC7066PCSH and EPC7065PCSH.

This expands the role of GaN from conventional power conversion toward environments where components must withstand demanding radiation conditions while maintaining dependable electrical performance.

One Technology, Multiple High-Growth Architectures;

EPC’s electronica demonstrations ultimately point toward a broader shift in semiconductor design.

GaN is increasingly being evaluated not simply as an alternative power transistor, but as an enabling technology for system-level miniaturization and architectural redesign.

The applications being demonstrated span:

• AI infrastructure: 800V power distribution and high-density processor power delivery
• AI data centers: high-frequency conversion and improved power-system efficiency
• Robotics: compact three-phase motor drives
• Drones: lightweight, high-performance power architectures
• Autonomous machines: integrated power and motion control
• Space computing: radiation-hardened power conversion
• Advanced electronics: multi-megahertz, low-voltage conversion

EPC’s presence at electronica 2026 highlights where the power semiconductor market is heading: higher voltage at the input, lower voltage at the processor, higher switching frequencies in between, and increasingly integrated power stages throughout the system.

AI, robotics and space electronics may look like separate markets, but they share a common requirement more performance from smaller and more efficient power architectures.

That is where GaN’s role could become increasingly strategic.

Rather than simply replacing silicon devices, the latest EPC demonstrations suggest that GaN is increasingly being designed into entirely new power architectures, particularly where size, switching speed, efficiency and system integration directly influence the competitiveness of the end product.