Ferroelectric Random Access Memory Market, Global Outlook and Forecast 2023-2032

The global Ferroelectric Random Access Memory market was valued at US$ 280.9 million in 2022 and is projected to reach US$ 360.7 million by 2029, at a CAGR of 3.6% during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.

Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.

FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).

 

A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary “0”s and “1”s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a “1” is encoded using the negative remnant polarization “-Pr”, and a “0” is encoded using the positive remnant polarization “+Pr”.In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the “up” or “down” orientation (depending on the polarity of the charge), thereby storing a “1” or “0”. Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say “0”. If the cell already held a “0”, nothing will happen in the output lines. If the cell held a “1”, the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the “down” side. The presence of this pulse means the cell held a “1”. Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.

 

This report aims to provide a comprehensive presentation of the global market for Ferroelectric Random Access Memory, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Ferroelectric Random Access Memory. This report contains market size and forecasts of Ferroelectric Random Access Memory in global, including the following market information:

Global Ferroelectric Random Access Memory Market Revenue, 2018-2023, 2024-2032, ($ millions)

Global Ferroelectric Random Access Memory Market Sales, 2018-2023, 2024-2032, (K Units)

Global top five Ferroelectric Random Access Memory companies in 2022 (%)

The major players in global Ferroelectric RAM market include Ramtron, Fujistu, etc. The top 2 players occupy about 85% shares of the global market. North America and China are main markets, they occupy about 60% of the global market. Serial Memory is the main type, with a share about 60%. Smart Meters and Medical Devices are main applications, which hold a share about 50%.

We surveyed the Ferroelectric Random Access Memory manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.

Total Market by Segment:

Chapter 1: Introduces the definition of Ferroelectric Random Access Memory, market overview.

Chapter 2: Global Ferroelectric Random Access Memory market size in revenue and volume.

Chapter 3: Detailed analysis of Ferroelectric Random Access Memory manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.

Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.

Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.

Chapter 6: Sales of Ferroelectric Random Access Memory in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space of each country in the world.

Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.

Chapter 8: Global Ferroelectric Random Access Memory capacity by region & country.

Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.

Chapter 10: Analysis of industrial chain, including the upstream and downstream of the industry.

Chapter 11: The main points and conclusions of the report.

Table of content

1 Introduction to Research & Analysis Reports
1.1 Ferroelectric Random Access Memory Market Definition
1.2 Market Segments
1.2.1 Market by Type
1.2.2 Market by Application
1.3 Global Ferroelectric Random Access Memory Market Overview
1.4 Features & Benefits of This Report
1.5 Methodology & Sources of Information
1.5.1 Research Methodology
1.5.2 Research Process
1.5.3 Base Year
1.5.4 Report Assumptions & Caveats
2 Global Ferroelectric Random Access Memory Overall Market Size
2.1 Global Ferroelectric Random Access Memory Market Size: 2022 VS 2032
2.2 Global Ferroelectric Random Access Memory Revenue, Prospects & Forecasts: 2018-2032
2.3 Global Ferroelectric Random Access Memory Sales: 2018-2032
3 Company Landscape
3.1 Top Ferroelectric Random Access Memory Players in Global Market
3.2 Top Global Ferroelectric Random Access Memory Companies Ranked by Revenue
3.3 Global Ferroelectric Random Access Memory Revenue by Companies
3.4 Global Ferroelectric Random Access Memory Sales by Companies
3.5 Global Ferroelectric Random Access Memory Price by Manufacturer (2018-2023)
3.6 Top 3 and Top 5 Ferroelectric Random Access Memory Companies in Global Market, by Revenue in 2022
3.7 Global Manufacturers Ferroelectric Random Access Memory Product Type
3.8 Tier 1, Tier 2 and Tier 3 Ferroelectric Random Access Memory Players in Global Market
3.8.1 List

 

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